Fundamental Studies of Halogen Reactions with Iii-v Semiconductor Surfaces

نویسندگان

  • William C. Simpson
  • Jory A. Yarmoff
چکیده

It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-V materials in the manufacture of optoelectronic devices has prompted investigations of the reactions of molecular halogens (XeF2, Cl2, Br2, and I2) with III-V semiconductor surfaces (GaAs, GaSb, InP, InAs, and InSb). This review examines the more fundamental of these investigations, which involve model systems in ultra-high vacuum, focusing on the chemistry of the halogen surface reactions and the physical and electronic structure of the reacted surfaces.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Halogen substituted iron(III) di(imino)pyridine complexes as catalysts for 1- pentene/1-hexene co-oligomerization reactions

Nine different bis(arylimino)pyridine complexes of Fe(III) with different halide substituents (F, Cl, Br, I) at different positions of the iminophenyl group of the ligand have been synthesized, characterized and applied for homogeneous 1-pentene and 1-hexene oligomerization and co-oligomerization reactions after activation with methylaluminoxane (MAO). The best activity in 1-hexene oligomerizat...

متن کامل

Translation Surfaces of the Third Fundamental Form in Lorentz-Minkowski Space

In this paper we study translation surfaces with the non-degenerate third fundamental form in Lorentz- Minkowski space $mathbb{L}^{3}$. As a result, we classify translation surfaces satisfying an equation in terms of the position vector field and the Laplace operator with respect to the third fundamental form $III$ on the surface.

متن کامل

Covalent Functionalization of GaP(110) Surfaces via a Staudinger- Type Reaction with Perfluorophenyl Azide

Despite the markedly low chemical reactivity of the nonpolar (110) surfaces of III−V semiconductors, the covalent functionalization of GaP(110) surfaces with perfluorophenyl azide (PFPA) molecules by a Staudinger-type reaction occurs only slightly above room temperature (325 K). Scanning tunneling microscopy observations, combined with density functional theory calculations, support the formati...

متن کامل

Construction and testing of a hydrogen cracking cell

A UHV atomic hydrogen-cracking cell has been constructed to produce atomic hydrogen in order to perform in-situ cleaning of semiconductor samples. The cell was calibrated and tested with the objective of cleaning the III-V semiconductor samples such as GaAs. Mass spectroscopy studies during the atomic hydrogen cleaning of the GaAs samples revealed the chemical process of the hydrogen cleaning. ...

متن کامل

Halogen-abstraction reactions from chloromethane and bromomethane molecules by alkaline-earth monocations.

The reactions, in the gas phase, between alkali-earth monocations (Mg(+), Ca(+), Sr(+), Ba(+)) and CH3X (X = Cl, Br) have been theoretically studied. The stationary points on the potential energy surfaces were characterized at the Density Functional Theory level on the framework of the mPW1K functional with the QZVPP Ahlrichs's basis sets. A complementary kinetics study has also been performed ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1998